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Focused ion beam doping for GaAs MBE growth

โœ Scribed by Hisao Hashimoto; Akira Takamori; Hiroshi Arimoto; Tetsuo Morita; Eizo Miyauchi


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
661 KB
Volume
4
Category
Article
ISSN
0167-9317

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A closed UHV focused ion beam patterning
โœ H. Muessig; Th. Hackbarth; H. Brugger; A. Orth; J.P. Reithmaier; A. Forchel ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 556 KB

An in situ ultra-high vacuum processing technique using a direct-write focused ion beam (FIB) implantation in combination with an epitaxial regrowth by molecular beam epitaxy (MBE) is reported. The process is suitable for the realization of buried confinement structures and current blocking layers i