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Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition

โœ Scribed by Shiuh-Ko JangJean; Chuan-Pu Liu; Ying-Lang Wang; Weng-Sing Hwang; Wei-Tsu Tseng; Sheng-Wen Chen; Kuang-Yao Lo

Book ID
113936446
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
284 KB
Volume
447-448
Category
Article
ISSN
0040-6090

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Plasma characteristics of low-k SiOC(โ€“H)
Plasma characteristics of low-k SiOC(โ€“H) films prepared by using plasma enhanced chemical vapor deposition from DMDMS/O2 precursors
โœ An Soo Jung; R. Navamathavan; Kwang Man Lee; Chi Kyu Choi ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 680 KB

We report in-situ plasma diagnostics during the deposition of low dielectric constant SiOC(-H) thin films on p-Si(100) substrates by using plasma enhanced chemical vapor deposition with dimethyldimethoxysilane (DMDMS, C 4 H 12 O 2 Si) and oxygen gas as precursors. The bulk plasma was characterized b