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Fluorine-doped SnO2 films for solar cell application

โœ Scribed by A. Bhardwaj; B.K. Gupta; A. Raza; A.K. Sharma; O.P. Agnihotri


Publisher
Elsevier Science
Year
1981
Weight
556 KB
Volume
5
Category
Article
ISSN
0379-6787

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โœฆ Synopsis


Highly conductive transparent thin films of fluorine-doped SnO2 (SnO2 :F) were prepared using spray pyrolysis. These films have a potential application in SIS-type photovoltaic solar cells because of their high transmission and low sheet resistance. The electrical resistivity is a minimum (about 5.4 ร— 10-4 ~2 cm) and the figure of merit is a maximum (about 10-2) for SnO2 films doped with 1.2 wt.% F. The optical data are interpreted to give a direct band gap of 4.27 eV and an indirect band gap of 2.73 eV. SnO2:F films show high optical transmission in films of low sheet resistance (about 5 ~2/D ) compared with the corresponding values for antimony-doped SnO2 films.


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