Fluorescence Intermittency in InP Self-Assembled Quantum Dots

✍ Scribed by M. Sugisaki; Hong-Wen Ren; I.S. Osad'ko; K. Nishi; Y. Masumoto

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 73 KB
• Volume: 224
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200103)224:1<67::aid-pssb67>3.0.co;2-p

✦ Synopsis

We report the fluorescence intermittency in self-assembled InP quantum dots studied by means of far field single dot spectroscopy. We found that the blinking efficiently occurs when the confined excitons are filled up to a certain level. Since blinking dots are observed in the vicinity of scratches, we attributed the origin of the fluorescence intermittency to a local electric field due to a carrier trapped at a deep localized center near the interface between the dot and matrix. The validity of this model is supported by a thermal activation type behavior of the switching rate and the micro-photoluminescence study in an external electric field.