✦ LIBER ✦

Fluence dependent carrier lifetime variations in Si detectors determined by photoconductivity and transient grating techniques

✍ Scribed by E. Gaubas; A. Kadys; J. Vaitkus; E. Fretwurst

Book ID: 103856809
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 492 KB
Volume: 583
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2007.08.196

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✦ Synopsis

Fluence-dependent carrier lifetime variation in heavily proton-irradiated Si detectors has been investigated by the microwave probed photoconductivity (MW-PCD) and transient grating (TG) techniques. Nearly linear decrease of carrier recombination lifetime, from hundreds of ns to few ns, as a function of fluence has been found in Si detectors fabricated on FZ standard and oxygenated material, after irradiation by 24 GeV/c protons with fluence in the range from 10 14 to 10 15 cm À2 . Radiation-defect dependent features of carrier transport and recombination have been analyzed. Models of carrier recombination centers associated with the radiation defects are discussed.

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