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First-principle study of electronic structure of Sn-doped amorphous In2O3 and the role of O-deficiency

โœ Scribed by Kim, Maengsuk; Kang, Il Joon; Park, Chul Hong


Book ID
121769839
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
522 KB
Volume
12
Category
Article
ISSN
1567-1739

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Electron beam evaporated Sn-doped In20 3 films have been prepared from the starting material with composition of (1 -x) In203 --x SnO 2, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were