Scattering parameters of microstrip ring resonators with ) and without slits that are either edge or side coupled to the feedlines are simulated by the FDTD method. The strip conductors on the de¨ice can either be infinitely thin or finite in thickness. The simulations predict the occurrence of reso
Finite-difference time-domain (FDTD) simulations of electromagnetic wave propagation using a spreadsheet
β Scribed by David W. Ward; Keith A. Nelson
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 275 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1061-3773
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π SIMILAR VOLUMES
and is divided into five uniform segments. For the explicit scheme, the time sample was chosen as 0.053 LM. The Ε½ . current at the location 0.0; y0.1 is shown in Figure 4. Again, the agreement is good, and it is seen that for the implicit scheme, one can make β¬ t large and violate the Courant stabil
A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). Th