A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). Th
✦ LIBER ✦
Finite-difference — time-domain analysis of a high-frequency microwave connector
✍ Scribed by Yinchao Chen; Yuval Shimony; Paul Harms; Raj Mittra
- Book ID
- 112146717
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 534 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
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