## Abstract A modified model for RF interconnect bends on lossy substrate in CMOS technology is presented. The model parameters are extracted directly from the on‐wafer S‐parameter measurements. The accuracy is verified up to 20 GHz by the measurements of the test structures. © 2005 Wiley Periodica
Finite-Difference Analysis of Interconnects With Frequency-Dependent Parameters Based on Equivalent Circuit Models
✍ Scribed by Min Tang; Junfa Mao
- Book ID
- 117904695
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 483 KB
- Volume
- 33
- Category
- Article
- ISSN
- 1521-3323
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