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Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well

โœ Scribed by Congxin Xia; Yalei Jia; Shuyi Wei; Harold N. Spector


Book ID
113720970
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
331 KB
Volume
132
Category
Article
ISSN
0022-2313

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We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with