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Field‐effect transistors based on poly(p‐phenylene vinylene) doped by ion implantation

✍ Scribed by Pichler, K.; Jarrett, C. P.; Friend, R. H.; Ratier, B.; Moliton, A.

Book ID
118250828
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
913 KB
Volume
77
Category
Article
ISSN
0021-8979

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Effect of n-type doping on the hole tran
Effect of n-type doping on the hole transport in poly(p-phenylene vinylene)
✍ Mingtao Lu; Herman T. Nicolai; Gert-Jan A. H. Wetzelaer; Paul W. M. Blom 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 500 KB

## Abstract N‐type doping of poly(2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n‐type doping simultaneously suppresses the hole transport in MEH‐PPV.