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Field Emission from Polycrystalline GaN Grown on Mo Substrate

✍ Scribed by T. Yamanaka; H. Tampo; K. Yamada; K. Ohnishi; M. Hashimoto; H. Asahi


Book ID
104556504
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
122 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract Si‐doped nonpolar __a__ ‐plane GaN films were grown on nano‐patterned sapphire substrates by a low‐pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high‐resolution X‐ray diffra