Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiO3 substrate and iridium buffer layer

✍ Scribed by Kubovic, M.; Aleksov, A.; Schreck, M.; Bauer, Th.; Stritzker, B.; Kohn, E.

• Book ID: 122789520
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 583 KB
• Volume: 12
• Category: Article
• ISSN: 0925-9635
• DOI: 10.1016/S0925-9635(03)00068-2