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Field effect on silicon

โœ Scribed by M.F Millea; T.C Hall; J.O Kopplin


Publisher
Elsevier Science
Year
1962
Tongue
English
Weight
557 KB
Volume
23
Category
Article
ISSN
0022-3697

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๐Ÿ“œ SIMILAR VOLUMES


Silicon-on-insulator non-volatile field-
โœ J.R. Schwank; M.R. Shaneyfelt; T.L. Meisenheimer; B.L. Draper; K. Vanhesden; D.M ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 104 KB

Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were