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Field effect in epitaxial graphene on a silicon carbide substrate

โœ Scribed by Gu, Gong; Nie, Shu; Feenstra, R. M.; Devaty, R. P.; Choyke, W. J.; Chan, Winston K.; Kane, Michael G.


Book ID
120991304
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
562 KB
Volume
90
Category
Article
ISSN
0003-6951

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We have investigated transport characteristics of epitaxial graphene grown on semi-insulating siliconface 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N 2 pressure atmosphere. We have succeeded in forming 1-2 layers of graphene on SiC in controlled manner. Th