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Femtosecond pulse generation from semiconductor lasers using the soliton-effect compression technique

✍ Scribed by Ahmed, K.A.; Kai Choong Chan; Hai-Feng Liu


Book ID
117865794
Publisher
IEEE
Year
1995
Tongue
English
Weight
909 KB
Volume
1
Category
Article
ISSN
1077-260X

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## Abstract Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. Β© 2