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Femtosecond external-cavity surface-emitting InGaAs/InP multiple-quantum-well laser

โœ Scribed by Xiang, Wang-hua; Friberg, Stephen R.; Watanabe, Kimitaka; Machida, Susumu; Jiang, Wenbin; Iwamura, Hidetoshi; Yamamoto, Yoshihisa


Book ID
115418598
Publisher
Optical Society of America
Year
1991
Tongue
English
Weight
337 KB
Volume
16
Category
Article
ISSN
0146-9592

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P-type delta-doped InGaAs/GaAs quantum w
โœ Nobuaki Hatori; Akimasa Mizutani; Nobuhiko Nishiyama; Fumichika Motomura; Fumio ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 127 KB ๐Ÿ‘ 1 views

The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin