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Feasibility Study on Quantitative Measurements of Singlet Oxygen Generation Using Singlet Oxygen Sensor Green

โœ Scribed by Lin, Huiyun; Shen, Yi; Chen, Defu; Lin, Lisheng; Wilson, Brian C.; Li, Buhong; Xie, Shusen


Book ID
120416524
Publisher
Springer
Year
2012
Tongue
English
Weight
512 KB
Volume
23
Category
Article
ISSN
1053-0509

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Photosensitized generation of singlet ox
โœ Gongalsky, M. B.; Kharin, A. Yu.; Zagorodskikh, S. A.; Osminkina, L. A.; Timoshe ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 526 KB

Photosensitization of singlet oxygen generation in porous silicon (PSi) was investigated by simultaneous measurements of the photoluminescence (PL) of silicon nanocrystals (nc-Si) and the infrared emission of the 1ฮ”-state of oxygen molecules at 1270 nm (0.98 eV) at room temperature. Photodegradation