✦ LIBER ✦

Feasibility of 250 nm gate patterning using i-line with OPC

✍ Scribed by V. Van Driessche; J. Finders; A. Tritchkov; K. Ronse; L. Van den hove; P. Tzviatkov

Book ID: 114155750
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 330 KB
Volume: 41-42
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(98)00024-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Patterning sub-30-nm MOSFET gate with i-

Patterning sub-30-nm MOSFET gate with i-line lithography

✍ Asano, K.; Yang-Kyu Choi; Tsu-Jae King; Chenming Hu 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 84 KB

Feasibility of finding malignant disease

Feasibility of finding malignant diseases with the Ar+ 501.7 nm laser line using a new blood-analysis method

✍ H. Sato; H. Hayashi; T. Totsuka; M. Sugiyama; S. Tsuchiya; K. Takeuchi; N. Mochi 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 513 KB

Use of He(I) 447.1-nm Line with Forbidde

Use of He(I) 447.1-nm Line with Forbidden Component for Electron Density Determination in Plasmas

✍ Mijatovic, Z.; Kobilarov, R.; Djurovic, S.; Stevanov, M. 📂 Article 📅 1997 🏛 Society for Applied Spectroscopy 🌐 English ⚖ 186 KB

Improvement in RF performance of 40-nm I

Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

✍ Chien-I Kuo; Heng-Tung Hsu; Chien-Ying Wu; Edward Y. Chang; Yu-Lin Chen; Wee-Chi 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 356 KB

Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from