Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

✍ Scribed by Pershenkov, V.S.; Belyakov, V.V.; Shalnov, A.V.

• Book ID: 115440138
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 714 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/23.340620