Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications

✍ Scribed by M. Ullán; S. Díez; M. Lozano; G. Pellegrini; D. Knoll; B. Heinemann

• Book ID: 108271838
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 728 KB
• Volume: 56
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2010.11.014