Fast Neutron Effects on GaAsP Schottky Barrier Diodes and Hall Effect Devices
β Scribed by Neamen, D. A.; Grannemann, W. W.
- Book ID
- 117929052
- Publisher
- IEEE
- Year
- 1972
- Tongue
- English
- Weight
- 979 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0018-9499
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We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples
Electrospinning is used to fabricate Schottky diodes using polyaniline nanofibers and n-doped Si. By varying the fiber diameter, and also by varying the fiber doping level at a fixed diameter, we compare the device performance and examine the role of surface states on barrier height and charge trans