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Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

✍ Scribed by S. Sciortino; F. Hartjes; S. Lagomarsino; F. Nava; M. Brianzi; V. Cindro; C. Lanzieri; M. Moll; P. Vanni


Book ID
108219288
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
275 KB
Volume
552
Category
Article
ISSN
0168-9002

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## Abstract This work has been focused on characterization of thick 4H‐SiC layers produced by sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize the grown material and evaluate the interfacial layer between metal and semiconductor. The characterization study