The light-emitting diode (LED) with a single GaSb QD layer embedded in a GaAs n-i-p structure operated under different injection currents and temperatures is investigated. With increase in injection currents, room-temperature electroluminescence (EL) peak blue shift is observed until a saturation of
✦ LIBER ✦
Far infrared response of InAs–GaSb type-II quantum dots
✍ Scribed by D.A. Broido; K. Kempa; U. Rössler
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 85 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1386-9477
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