Far infrared measurements of bulk and surface phonons in GaAs/AlAs superlattices
β Scribed by Dumelow, T. ;Hamilton, A. A. ;Parker, T. J. ;Tilley, D. R. ;Foxon, C. T. B. ;Hilton, D. ;Moore, K. J.
- Publisher
- Springer
- Year
- 1990
- Tongue
- English
- Weight
- 723 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0195-9271
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π SIMILAR VOLUMES
Measurements" by Raman spectroscopy, oblique incidence far-IR power reflection spectroscopy and attenuated total reflection spectroscopy have been used to study bulk and surface phonons and plasmons in semiconductor superlattices and multiple quantum wells. Raman spectroscopy has been used to invest
The use of Raman scattering in different polarization geometries makes it possible to observe the splitting of transverse optical (TO) phonon modes confined in GaAs/AlAs superlattices grown on faceted GaAs (311)A surfaces. The frequencies of TO modes with atomic displacements in the direction along