Fano profile in intersubband transitions in InAs quantum dots
β Scribed by Ph. Lelong; S.-W. Lee; K. Hirakawa; H. Sakaki
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 114 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
In this paper the intersubband optical transitions in quantum dots are studied. Theoretical calculations of peak wavelengths and oscillator strengths of the transitions from the bound to ΓΏrst and second excited states were made for the InxGa1-xAs=GaAs and InAs=AlxGa 1-x As systems. The results show
To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot
## Abstract We propose a general formalism for describing the coexistence of coherent and resonant transport in hybrid mesoscopic structures. The approach is based on LandauerβBΓΌttiker formula for the electronic transmittance and on an old formula of Feshbach. The latter gives the complete Green fu