𝔖 Bobbio Scriptorium
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Facile fabrication of all-SWNT field-effect transistors

✍ Scribed by Shinya Aikawa; Rong Xiang; Erik Einarsson; Shohei Chiashi; Junichiro Shiomi; Eiichi Nishikawa; Shigeo Maruyama


Book ID
107642815
Publisher
Tsinghua Press
Year
2011
Tongue
English
Weight
844 KB
Volume
4
Category
Article
ISSN
1998-0124

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Low-Voltage All-Polymer Field-Effect Tra
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## Abstract **Summary:** An all‐polymer field‐effect transistor (FET) fabricated using an inkjet printing technique is presented in this paper. Poly(3,4‐ethylenedioxythiophene) works as the source/drain/gate electrode material because of its good conductivity. Polypyrrole acts as the semiconducting