We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we a
β¦ LIBER β¦
Fabrication of ultra-short T gates by a two-step electron beam lithography process
β Scribed by Yifang Chen; Kaiwu Peng; Zheng Cui
- Book ID
- 113797651
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 252 KB
- Volume
- 73-74
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
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