Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films

✍ Scribed by D.F. Takeuti; M.N. Tirolli; C.L. Danieli; M.A.R. Alves; E.S. Braga; P.H.L. de Faria

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 341 KB
• Volume: 38
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2006.10.003

✦ Synopsis

A fabrication process of silicon field-emission arrays is reported, in which thin films of amorphous hydrogenated carbon (a-C:H) are employed as masks in a two-step plasma-etching process, using pure SF 6 and a mixture of SF 6 and O 2 . In comparison with processes that involve SiO 2 masks, the use of a-C:H improved the selectivity of the plasma etching, particularly in the case of pure SF 6 . An estimation of Utsumi's figure of merit showed that a significant enhancement in electric field can be achieved, as a result of the sharp tips fabricated through this process.