## Abstract Metal‐assisted etching is used in conjunction with block‐copolymer lithography to create ordered and densely‐packed arrays of high‐aspect‐ratio single‐crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19 nm and 10 nm, res
✦ LIBER ✦
Fabrication of self-aligned gated silicon microtip array using electrochemical silicon etching
✍ Scribed by Barillaro, G. ;D'Angelo, F. ;Pennelli, G. ;Pieri, F.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 163 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
In this paper we report a new approach to fabricate gated silicon microtip arrays for field emission applications using a single mask process. The key role in the fabrication process is played by the photoelectrochemical etching of silicon in HF‐based electrolytes. This technique is here exploited to produce highly uniform silicon microtip arrays. The fabrication process is detailed and the dependence of the tip geometry on the electrochemical etching parameters is discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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