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Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization

✍ Scribed by Xu Man; Xia Donglin; Yang Sheng; Zhao Xiujian


Publisher
Wuhan University of Technology
Year
2006
Tongue
English
Weight
541 KB
Volume
21
Category
Article
ISSN
1000-2413

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Characterization of thin film transistor
✍ L. Michalas; G.J. Papaioannou; D.N. Kouvatsos; F.V. Farmakis; A.T. Voutsas πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 131 KB

Polycrystalline silicon quality is a key issue parameter for the performance and reliability of thin film transistors. Therefore in the present work, the material related electrical properties of TFTs fabricated on films crystallized by two different SLS-ELA procedures, 1-shot/overlapped irradiated,