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Fabrication of p-type ZnO nanowires based heterojunction diode

✍ Scribed by Sachindra Nath Das; Ji-Hyuk Choi; Jyoti Prakash Kar; Tae Il Lee; Jae-Min Myoung


Book ID
113783519
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
791 KB
Volume
121
Category
Article
ISSN
0254-0584

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati