Low-temperature oxidation of SiGe by liq
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Y.H. Chen; C.Y. Kung; J.D. Hwang; H.Y. Lin; H.J. Chan; P.S. Chen
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Article
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2008
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Elsevier Science
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English
β 382 KB
In recent years, silicon germanium (SiGe) has become one of the most promising materials for the fabrication of heterojunction bipolar transistor, metal-oxide-semiconductor (MOS) field-effect transistor (FET), and optoelectronic devices [1-3]. Among these devices, the MOS device is the most interest