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Fabrication of InAs quantum dots on silicon

✍ Scribed by G. É. Cirlin; V. N. Petrov; V. G. Dubrovskii; S. A. Masalov; A. O. Golubok; N. I. Komyak; N. N. Ledentsov; Zh. I. Alferov; D. Bimberg


Book ID
110123575
Publisher
SP MAIK Nauka/Interperiodica
Year
1998
Tongue
English
Weight
235 KB
Volume
24
Category
Article
ISSN
1063-7850

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The modulation spectroscopy on 1.45 mm metamorphic InAs quantum dots (QDs) with In 0.3 Ga 0.7 As capping layer grown on GaAs substrate by molecular beam epitaxy (MBE) has been investigated by differential absorption (Da), electro-reflectance (ER), and photo-reflectance (PR) spectra at different reve