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Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel Length

✍ Scribed by Lin, Horng-Chih; Lyu, Rong-Jhe; Huang, Tiao-Yuan

Book ID
127113850
Publisher
IEEE
Year
2013
Tongue
English
Weight
521 KB
Volume
34
Category
Article
ISSN
0741-3106

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## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p