𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication of GaN-Based Resonant Cavity LEDs

✍ Scribed by Maaskant, P. ;Akhter, M. ;Roycroft, B. ;O'Carroll, E. ;Corbett, B.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
173 KB
Volume
192
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Extraction Efficiency of GaN-Based LEDs
✍ Schad, S.S. ;Scherer, M. ;Seyboth, M. ;Schwegler, V. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 83 KB
Fabrication of Two-Dimensional InGaN-Bas
✍ Jeon, C.-W. ;Kim, K.-S. ;Dawson, M.D. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 160 KB πŸ‘ 1 views

We have successfully fabricated two-dimensional InGaN-based 12 Γ‚ 12 micro-light emitting diode (LED) arrays with individually addressable emitters having diameters of 8 and 12 mm. A new planarisation scheme including gap-filling with plasma enhanced chemical vapour deposition (PECVD) SiO 2 and a che

Fabrication of LEDs Based on III-V Nitri
✍ Shibata, N. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 230 KB πŸ‘ 1 views

III-V nitride semiconductors are useful for LEDs with colors ranging from ultraviolet, blue to green. The luminescence of these LEDs shows a high luminosity and a high purity of color, and, therefore, many applications have been realized using these LEDs.