Fabrication of GaN-Based Resonant Cavity LEDs
β Scribed by Maaskant, P. ;Akhter, M. ;Roycroft, B. ;O'Carroll, E. ;Corbett, B.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 173 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We have successfully fabricated two-dimensional InGaN-based 12 Γ 12 micro-light emitting diode (LED) arrays with individually addressable emitters having diameters of 8 and 12 mm. A new planarisation scheme including gap-filling with plasma enhanced chemical vapour deposition (PECVD) SiO 2 and a che
III-V nitride semiconductors are useful for LEDs with colors ranging from ultraviolet, blue to green. The luminescence of these LEDs shows a high luminosity and a high purity of color, and, therefore, many applications have been realized using these LEDs.