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Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

✍ Scribed by Saito, Takeyasu; Park, Kyung-ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Okushi, Hideyo


Book ID
123355734
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
207 KB
Volume
14
Category
Article
ISSN
0925-9635

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