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Fabrication of CMOS retrograde wells by doping compensation with ion implantation

✍ Scribed by J Montserrat; J Bausells; E Lora-Tamayo; F Serra-Mestres


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
302 KB
Volume
39
Category
Article
ISSN
0042-207X

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SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystal