Fabrication of 3D Macroporous Structures of II−VI and III−V Semiconductors Using Electrochemical Deposition

Properties of Group-IV, III-V and II-VI

Properties of Group-IV, III-V and II-VI Semiconductors (Adachi/Properties of Group-IV, III-V and II-VI Semiconductors) || Structural Properties

✍ Adachi, Sadao 📂 Article 📅 2005 🏛 John Wiley & Sons, Ltd 🌐 English ⚖ 206 KB 👁 2 views

almost All The Semiconductors Of Practical Interest Are The Group-iv, Iii-v And Ii-vi Semiconductors And The Range Of Technical Applications Of Such Semiconductors Is Extremely Wide. the Purpose Of This Book Is Twofold: * to Discuss The Key Properties Of The Group-iv, Iii-v And Ii-vi Semiconductor

Properties of Group-IV, III-V and II-VI

Properties of Group-IV, III-V and II-VI Semiconductors (Adachi/Properties of Group-IV, III-V and II-VI Semiconductors) || Energy-Band Structure: Effective Masses

✍ Adachi, Sadao 📂 Article 📅 2005 🏛 John Wiley & Sons, Ltd 🌐 English ⚖ 259 KB 👁 2 views

almost All The Semiconductors Of Practical Interest Are The Group-iv, Iii-v And Ii-vi Semiconductors And The Range Of Technical Applications Of Such Semiconductors Is Extremely Wide. the Purpose Of This Book Is Twofold: * to Discuss The Key Properties Of The Group-iv, Iii-v And Ii-vi Semiconductor

Properties of Group-IV, III-V and II-VI

Properties of Group-IV, III-V and II-VI Semiconductors (Adachi/Properties of Group-IV, III-V and II-VI Semiconductors) || Energy-Band Structure: Energy-Band Gaps

✍ Adachi, Sadao 📂 Article 📅 2005 🏛 John Wiley & Sons, Ltd 🌐 English ⚖ 439 KB 👁 2 views

6 Energy-band Structure: Energy-band Gaps 6.1 Basic properties 103 6.1.1 Energy-band structure 103 6.1.2 Electronic density of states 111 6.2 E 0 -gap region 114 6.2.1 Effective -point hamiltonian 114 6.2.2 Room-temperature value 115 6.2.3 External perturbation effect 120 6.2.4 Doping effect 126 6.3

Hyperfine Interactions and Magnetism of

Hyperfine Interactions and Magnetism of 3d Transition-Metal-Impurities in II–VI and III–V Compound-Based Diluted Magnetic Semiconductors

✍ K. Sato; H. Katayama-Yoshida 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 81 KB

Ir studies of disordered zincblende semi

Ir studies of disordered zincblende semiconductors III-V-II-VI alloys and GaAs-Ga2/3Se

✍ G. Lucovsky; J. C. Mikkelsen 📂 Article 📅 1976 🏛 Springer US 🌐 English ⚖ 414 KB

Origin of d^{0} magnetism in II-VI and I

Origin of d^{0} magnetism in II-VI and III-V semiconductors by substitutional doping at anion site

✍ Yang, Kesong; Wu, Rongqin; Shen, Lei; Feng, Yuan Ping; Dai, Ying; Huang, Baibiao 📂 Article 📅 2010 🏛 The American Physical Society 🌐 English ⚖ 131 KB