Properties of Group-IV, III-V and II-VI Semiconductors (Adachi/Properties of Group-IV, III-V and II-VI Semiconductors) || Energy-Band Structure: Energy-Band Gaps

✍ Scribed by Adachi, Sadao

• Publisher: John Wiley & Sons, Ltd
• Year: 2005
• Tongue: English
• Weight: 439 KB
• Edition: 1
• Category: Article
• ISBN: 0470090324
• DOI: 10.1002/0470090340.ch6

✦ Synopsis

6 Energy-band Structure: Energy-band Gaps 6.1 Basic properties 103 6.1.1 Energy-band structure 103 6.1.2 Electronic density of states 111 6.2 E 0 -gap region 114 6.2.1 Effective -point hamiltonian 114 6.2.2 Room-temperature value 115 6.2.3 External perturbation effect 120 6.2.4 Doping effect 126 6.3 Higher-lying direct gap 130 6.3.1 Cubic semiconductor 130 6.3.2 Hexagonal and rhombohedral semiconductors 137 6.4 Lowest indirect gap 137 6.4.1 Room-temperature value 137 6.4.2 External perturbation effect 138 6.5 Conduction-valley energy separation 142 6.6 Direct-indirect-gap transition pressure