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Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

โœ Scribed by Shoubin Xue; Huizhao Zhuang; Baoli Li; Lijun Hu; Shiying Zhang; Chengshan Xue


Book ID
113790796
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
502 KB
Volume
61
Category
Article
ISSN
0167-577X

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Fabrication, morphology, and photolumine
โœ Zhaozhu Yang; Chengshan Xue; Huizhao Zhuang; Lixia Qin; Jinhua Chen; Hong Li; Do ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 821 KB

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra