A quantumdot transistor incorpomting silicon self-assembled quantum dots and planar nano-meter sized metal pads @no-arms) has been fabricated. The current-voltage characteristics measured fmm the transistor exhibits staircases and oscillations, whose interpretation is consistent with the single elec
β¦ LIBER β¦
Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor
β Scribed by Choi, B. H.; Hwang, S. W.; Kim, I. G.; Shin, H. C.; Kim, Yong; Kim, E. K.
- Book ID
- 120647910
- Publisher
- American Institute of Physics
- Year
- 1998
- Tongue
- English
- Weight
- 564 KB
- Volume
- 73
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.122695
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## Abstract A trial was carried out to fabricate selfβassembled InGaN QD structures through periodic interruption growth, which is new method for supplying the source materials in a metal organic chemical vapor deposition (MOCVD) reactor. The growth of InGaN QDs was interrupted periodically by stop