𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

✍ Scribed by Choi, B. H.; Hwang, S. W.; Kim, I. G.; Shin, H. C.; Kim, Yong; Kim, E. K.


Book ID
120647910
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
564 KB
Volume
73
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A silicon self assembled quantum dot tra
✍ B.H. Choi; S.W. Hwang; I.G. Kim; H.C. Shin; Yong Kim; E.K. Kim πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 268 KB

A quantumdot transistor incorpomting silicon self-assembled quantum dots and planar nano-meter sized metal pads @no-arms) has been fabricated. The current-voltage characteristics measured fmm the transistor exhibits staircases and oscillations, whose interpretation is consistent with the single elec

Fabrication and characterization of self
✍ Choi, Seung-Kyu ;Jang, Jae-Min ;Jhin, Jung-Keun ;Jung, Woo-Gwang πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 793 KB

## Abstract A trial was carried out to fabricate self‐assembled InGaN QD structures through periodic interruption growth, which is new method for supplying the source materials in a metal organic chemical vapor deposition (MOCVD) reactor. The growth of InGaN QDs was interrupted periodically by stop