Fabrication and photoelectrochemical properties of porous ZnWO4 film

✍ Scribed by Xu Zhao; Wenqing Yao; Yan Wu; Shicheng Zhang; Haipeng Yang; Yongfa Zhu

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 686 KB
• Volume: 179
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1016/j.jssc.2006.05.004

✦ Synopsis

Porous ZnWO 4 films have been fabricated on Indium-tin oxide (ITO) glass and its photoelectrochemical properties and high photocatalytic activities towards degradation of rhodamine B (RhB) has been investigated. Using amorphous heteronuclear complex as precursor and with the addition of polyethylene glycol (PEG, molecular weight ¼ 400), the porous ZnWO 4 films have been achieved at the temperature of 500 1C via dip-coating method. It is composed of approximately 70 nm-sized particles and exhibits substantial porosity. The textures and porosity of ZnWO 4 films are dependent on preparation factors, such as the ratio of precursor/PEG and the annealing conditions. The formation mechanism of porous ZnWO 4 films was proposed. The porous ZnWO 4 films exhibited high photocatalytic activities towards degrading RhB. The top of valence band and the bottom of the conduction band was estimated to be À0.56 and 3.45 eV (vs. saturated calomel electrode (SCE)), respectively.