In view of the integration within Si-based optical devices, LPCVD (low-pressure chemical vapor deposition) thin-film Si 3 N 4 waveguides have been fabricated on a Si substrate within a CMOS fabrication pilot-line. Different structures (channel, rib and strip-loaded) were designed, fabricated and characterized both optically and structurally to optimize waveguide performances. Geometry, sidewall as well as layer roughness of the waveguides have been investigated by scanning electron microscopy and atomic force microscopy. Optical guided modes have been observed and propagation loss measurements at 632.8 and 780 nm have been performed by using the cut-back technique, the insertion loss technique and scattered light collection. The channel waveguides have shown propagation losses of about 0.1-0.2 dB/cm. Differences between geometries and lithographic processes have been discussed. Polarization dependence of propagation losses has been investigated too.
Optical guided modes have also been measured in the near-infrared range (at 1544 nm), where propagation losses are about 4.5-5 dB/cm, quite larger with respect to the visible, because of the poorer confinement factor of the optical modes.