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Fabrication and characterization of SrZrO3 thin films prepared by sol–gel

✍ Scribed by Hui-Qin Ling; Ai-Dong Li; Di Wu; Yue-Feng Tang; Zhi-Guo Liu; Nai-Ben Ming


Book ID
114193049
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
115 KB
Volume
75
Category
Article
ISSN
0254-0584

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Resistive switching properties of sol–ge
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Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during