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Fabrication and characterization of InGaN p-i-n homojunction solar cell

✍ Scribed by Cai, Xiao-mei; Zeng, Sheng-wei; Zhang, Bao-ping

Book ID
121663904
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
545 KB
Volume
95
Category
Article
ISSN
0003-6951

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## Abstract The InGaN alloy system offers a unique opportunity to develop high efficiency multi‐junction solar cells. In this study, single junction solar cells made of In__~x~__ Ga~1–__x__~ N are successfully developed, with __x__ = 0, 0.2, and 0.3. The materials are grown on sapphire substrates b