This paper reports the fabrication of an in situ back-gated hole gas on the (311)A suffacc of GaAs. The holc density can be varied from fullv depleted to p~=2.1 x 10 I~ cm -2 with mobilities of up to/2-1.1 x:106cm2V -! s -1. It is seen that for carrier densities down to p~=4x 10mcm -2 the mobility i
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET
β Scribed by W.R. Clarke; A.P. Micolich; A.R. Hamilton; M.Y. Simmons; K. Muraki; Y. Hirayama
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 118 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0026-2692
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