## Abstract We have used the 4 Γ 4 LuttingerβKohn Hamiltonian to analyse the presence of deltaβstrain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 ΞΌm InGaAsP/InP lattice matched system grown in the [001] direction with and
β¦ LIBER β¦
Fabrication and characterization of 1 550 nm polarization-insensitive semiconductor optical amplifiers
β Scribed by Yong-hong Hu; Yong-zhen Huang; Li-juan Yu; Qin Chen; Man-qing Tan; Xiao-yu Ma
- Book ID
- 105699255
- Publisher
- Tianjin University of Technology
- Year
- 2006
- Tongue
- English
- Weight
- 263 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1673-1905
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In this paper, the aims of our study are to analyze the gain of semiconductor optical amplifiers with tensile strained multiple quantum wells and to examine the structure for polarization-insensitive characteristics for the purpose of showing the design guidelines. Since lasers with conventional lat