✦ LIBER ✦

Extrinsic Dissociation of a Dislocation in GaAs in the Presence of Point Defects

✍ Scribed by Theodore, N. D. ;De Cooman, B. C. ;Carter, C. B.

Book ID: 105381373
Publisher: John Wiley and Sons
Year: 1989
Tongue: English
Weight: 493 KB
Volume: 114
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211140107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simulation of dislocation configurations

Simulation of dislocation configurations in the presence of mobile point defects

✍ A.N. Gulluoglu 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 384 KB

The generation of point defects in GaAs

The generation of point defects in GaAs by electron-hole recombination at dislocations

✍ P.W. Hutchinson; P.S. Dobson; B. Wakefield; S. O'Hara 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 519 KB

Low-angle grain boundary migration in th

Low-angle grain boundary migration in the presence of extrinsic dislocations

✍ A.T. Lim; D.J. Srolovitz; M. Haataja 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 440 KB

We investigated the migration of a symmetric tilt, low-angle grain boundary (LAGB) under applied shear stress in the presence of extrinsic dislocations. The results demonstrate that there is a threshold stress for the LAGB to depin from extrinsic dislocations. Below the threshold stress, the LAGB re

The Dissociation of Dislocations in Pure

The Dissociation of Dislocations in Pure and Doped GaAs Crystals

✍ Khodos, I. I. ;Sh. Shikhsaidov, M. ;Snighireva, I. I. ;Ushakova, A. P. ;Nikolaic 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 869 KB

Manifestations of deep levels point defe

Manifestations of deep levels point defects in GaAs

✍ G.M. Martin; S. Makram-Ebeid 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 933 KB

Native point defects in low‐temperature‐

Native point defects in low‐temperature‐grown GaAs

✍ Liu, X.; Prasad, A.; Nishio, J.; Weber, E. R.; Liliental‐Weber, Z.; Walukiewicz, 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 319 KB