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Extreme g-factor anisotropy of low mobility 2D hole gas in GaAs/In0.2Ga0.8As/GaAs quantum well

✍ Scribed by Soldatov, I.V.; Germanenko, A.V.; Kozlova, N.

Book ID
121730676
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
414 KB
Volume
57
Category
Article
ISSN
1386-9477

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Zinc delta-doped GaAs and pseudomorphic GaAs/In 0.2 Ga 0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. Fro